Andrei Sazonov

Associate Professor

Electrical and Computer Engineering Department

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ECE 209
ECE 231
ECE 434
ECE 493_1
ECE 639

RESEARCH
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Refereed Conference Papers
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Conference Presentations:
  • M.R. Esmaeili Rad (Student), A. Sazonov, D. Striakhilev, and A. Nathan, "Stable bottom-gate Nanocrystalline/Amorphous Silicon TFTs for OLED Displays," Thin Film Transistor Technologies Symposium, 210th meeting of the Electrochemical Society, Cancun, Mexico, October 29-November 3, 2006 (accepted).

  • M.R. Esmaeili Rad (Student), A. Sazonov, and A. Nathan, "Optical and Electrical Properties of Intrinsic Nanocrystalline Silicon Deposited by PECVD," International Conference on Optical and Optoelectronic Properties of Materials and Applications (ICOOPMA), Darwin, Australia, July 15-22, 2006.

  • C.-H. Lee, A. Sazonov, and A. Nathan, "Nanocrystalline silicon thin-film transistors for flexible electronics," Proceedings of 5th International Conference “Amorphous and Microcrystalline Semiconductors”, Saint Petersburg, Russia, June 19-21, 2006.

  • C.-H. Lee (Student), A. Sazonov, M.R. Esmaeili Rad (Student), G.R. Chaji, and A. Nathan, “Ambipolar Thin-Film Transistors and Invertors Fabricated by PECVD Nanocrystalline Silicon,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 17-21, 2005.

  • M.R. Esmaeili Rad (Student), C.-H. Lee (Student), A. Sazonov, and A. Nathan, “Nanocrystalline Silicon Films Deposited by RF PECVD for Bottom-Gate Thin-Film Transistors,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 17-21, 2005.

  • H.J. Lee (Student), A. Sazonov, and A. Nathan, “Low Temperature Stacked Gate Dielectrics for Flexible Electronics,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 17-21, 2005.

  • M.R. Esmaeili Rad (Student), C.-H. Lee (Student), A. Sazonov, and A. Nathan, “A Study of PECVD Silicon Oxynitride Films for nc-Si TFT Gate Insulator Applications,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 17-21, 2005.

  • C.-H. Lee (Student), A. Sazonov, and A. Nathan, “High Mobility Nanocrystalline Silicon Thin-Film Transistors,” Abstract, 2005 IEEE International Electron Devices Meeting, Washington, DC, USA, December 5-7, 2005.

  • A. Sazonov, “Thin Film Silicon for Flexible Electronics,” Symposium on Hybrid Organic/Inorganic Opportunities, International Plastic Electronics Conference, Frankfurt, Germany, October 4-5, 2005 (invited).

  • A.G. Kazanskii, A.A. Khomich, A. Sazonov, M.R. Esmaeili Rad (Student), C.-H. Lee (Student), A. Nathan, V.I. Kovalev, and A.I. Rukovishnikov, “Optical, electrical and photoelectrical characterization of PECVD nanocrystalline silicon thin films,” Abstract, 6th International Conference “Micro- and nanoelectronics – 2005”, Moscow, Russia, October 3-7, 2005.

  • C.-H. Lee (Student), A. Sazonov, and A. Nathan, “High Hole And Electron Mobilities In Nanocrystalline Silicon Thin-Film Transistors,” Abstract, 20th International Conference on Amorphous & Nanocrystalline Semiconductors Science & Technology, Lisbon, Portugal, September 5-9, 2005.

  • A. Sazonov, A. Kosarev, A. Torres, “Thin Film Encapsulation Barriers for Flexible Organic Electronics,” Abstract, XIV International Materials Research Congress, Cancun, Mexico, August 21-25, 2005.

  • C.-H. Lee (Student), A. Sazonov, and A. Nathan,Directly Deposited Nanocrystalline Silicon Thin-Film Transistors with High Hole and Electron Field-Effect Mobilities,” Abstract, XIV International Materials Research Congress, Cancun, Mexico, August 21-25, 2005.

  • K. Bayat (Student), Y. Vygranenko, A. Sazonov, and M.F. Baroughi, “Design, Fabrication and Characterization of Highly Selective a-Si:H Based UV Detector for Sunburn Applications,” Abstract, 12th Canadian Semiconductor Technology Conference, Ottawa, August 15-19, 2005.

  • H.J. Lee (Student), A. Sazonov, and A. Nathan, “Low Temperature Gate Dielectrics for Silicon-on-Plastic,” Abstract, 12th Canadian Semiconductor Technology Conference, Ottawa, August 15-19, 2005.

  • M.R.Esmaeili Rad (Student), C.-H. Lee (Student), A. Sazonov, and A. Nathan, “Optimization of Nanocrystalline Silicon Deposition for High Performance Thin Film Circuits,” Abstract, 12th Canadian Semiconductor Technology Conference, Ottawa, August 15-19, 2005.

  • P. Mahdian (Student), J. Lau (Student), A. Sazonov, “Thin-Flexible Neural Probe,” Proceedings of IEEE International Conference for Upcoming Engineers, Windsor, Canada, May 20-21, 2005.

  • A. Nathan, D. Striakhilev, P. Servati, and A. Sazonov, “Amorphous Silicon Integration on Plastic for Flexible Displays,” Proceedings of 207th Meeting of the Electrochemical Society, Quebec City, Canada, May 15-20, 2005 (invited).

  • K. Bayat (Student), Y. Vygranenko, A. Sazonov, and M.F. Baroughi, “Design, Fabrication and Characterization of Highly Selective a-Si:H Based UV Detector for Sunburn Applications,” Abstract, 18th Annual Canadian Conference on Electrical and Computer Engineering, Saskatoon, Saskatchewan, Canada, May 1-4, 2005.

  • C.-H. Lee (Student), A. Sazonov, and A. Nathan, “Effects of Post Annealing and Material Stability on Undoped and n+ nc-Si:H Films Deposited at 75 °C Using 13.56 MHz PECVD,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, March 28-April 1, 2005.

  • C.-H. Lee (Student), A. Sazonov, and A. Nathan, “High Electron Mobility (~120 cm2/Vs) PECVD Nanocrystalline Silicon Top-Gate TFTs at 260 oC,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, March 28-April 1, 2005.

  • S. Koul, Y. Vygranenko, A. Sazonov, F. Li and A. Nathan,” Fabrication of RR-P3HT-Based TFTs Using Low-Temperature PECVD Silicon Nitride,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, March 28-April 1, 2005.

  • A. Sazonov, and M.Meitine, “Sub-100ºC Amorphous and Microcrystalline Silicon Based TFTs for Flexible Electronics,” Proceedings of 4th International Conference “Amorphous and Microcrystalline Semiconductors”, Saint Petersburg, Russia, July 5-7, 2004, p.296.

  • C.-H. Lee (Student), A. Sazonov, and A. Nathan, “Low Temperature (75°C) Hydrogenated Nanocrystalline Silicon Films Grown by Conventional Plasma Enhanced Chemical Vapor Deposition for Thin Film Transistors,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 12-16, 2004.

  • M. Meitine, and A. Sazonov, (2004) “Top Gate TFT for Large Area Electronics,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 12-16, 2004.

  • A. Sazonov, “Materials Challenges for TFT on Plastic Substrates,” 16th Annual IEEE Lasers and Electro Optics Society (LEOS) Meeting, Tucson, USA, October 27-29, 2003 (invited).

  • A. Sazonov, and C. McArthur (Student), “Sub-100ºC a-Si:H TFTs on plastic substrates with silicon nitride gate dielectrics,” Eleventh Canadian Semiconductor Technology Conference, Ottawa, Canada, August 18-22, 2003.

  • A. Sazonov, and M.Meitine, “Thin Film Transistors with SiOx Gate Dielectric Fabricated at 75oC for Electronics on Plastics,” Eleventh Canadian Semiconductor Technology Conference, Ottawa, Canada, August 18-22, 2003.

  • C. McArthur (Student), M. Meitine, and A. Sazonov, “Optimization of 75°C Amorphous Silicon Nitride for TFTs on Plastics,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 21-25, 2003.

  • M. Meitine, and A. Sazonov, “Low Temperature PECVD Silicon Oxide for Devices and Circuits on Flexible Substrates,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 21-25, 2003 – Second Best MRS Poster Presentation.

  • A. Sazonov, M.Meitine, C. McArthur (Student), D. Stryahilev, and A. Nathan, “Low Temperature Materials and Devices For a-Si:H Based Electronics on Plastic Substrates,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 21-25, 2003.

  • A. Nathan, A. Sazonov, D. Striakhilev, P. Servati, and K. Karim, “a-Si:H TFT Circuit Integration on Glass and Plastic Substrates,” Thin Film Transistor Technologies VI, J.Kuo, ed., Proc. Of 202nd Meeting of the Electrochemical Society, Salt Lake City, USA, October 20-25, 2002.

  • P. Servati, D. Stryahilev, A. Nathan, A. Sazonov, “Experimental Characterization And Physical Modeling Of Low Temperature a-Si:H TFTs,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 1-5, 2002.

  • D. Stryahilev, A. Sazonov, P. Servati, and A. Nathan, “Low Temperature a-Si:H TFT Fabrication Process For Plastic Substrates: Effect Of Material Properties On Device Performance,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 1-5, 2002.

  • A. Sazonov, D. Stryahilev, and A. Nathan, “Materials and Fabrication of Amorphous Silicon TFT Arrays on Plastic Substrates,” 2nd International Displays Manufacturing Conference, Seoul, South Korea, January 29-31, 2002 (invited).

  • D. Stryahilev, A. Sazonov, and A. Nathan, “Low Temperature a-Si:H TFT Fabrication On Plastic Films,” Proceedings of 21st International Displays Research Conference/8th International Displays Workshop (Asia Displays), Nagoya, Japan, October 16-19, 2001: 1739-1740.

  • D. Stryahilev, A. Sazonov, A.Nathan, and L.D. Bogomolova, “Dielectric performance of low temperature silicon nitride films in a-Si:H TFTs,” Abstract, 19th International Conference on Amorphous & Microcrystalline Semiconductors Science & Technology, Nice, France, August 27-31, 2001.

  • I. Chan, B. Park, A. Sazonov, A. Nathan, “Dry Etch Process Optimization for Small-Area a-Si:H Vertical Thin Film Transistors,” Abstract, 10th Canadian Semiconductor Technology Conference, Ottawa, Ontario, Canada, August 13 – 17, 2001.

  • T. Charania, A. Sazonov, and A. Nathan, “Use of 120 °C n+-mc-Si:H in Low Temperature TFT Fabrication,” Abstracts, 198th Meeting of the Electrochemical Society, (Phoenix, Arizona, USA, October 22-27, 2000).

  • I. Chan, B. Park, A. Sazonov, and A. Nathan, “Process Considerations for Small Area a-Si:H Vertical Thin Film Transistors,” Abstracts, 198th Meeting of the Electrochemical Society, (Phoenix, Arizona, USA, October 22-27, 2000).

  • P. Servati, A. Nathan, and A. Sazonov, “Mechanisms Underlying the OFF Characteristics of a-Si:H Thin Film Transistors,” Abstracts, 198th Meeting of the Electrochemical Society, (Phoenix, Arizona, USA, October 22-27, 2000).

  • A. Nathan, R.V.R. Murthy, B. Park, A. Sazonov, and S.G. Chamberlain, “Roughness of TFT gate metallization and its impact on leakage, threshold voltage shift and mobility,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 24-28, 2000.

  • P. Servati, A. Sazonov and A. Nathan, “A physically-based SPICE model for the leakage current in a-Si:H TFTs accounting for its dependencies on process, geometrical, and bias conditions,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 24-28, 2000.

  • A. Sazonov, D. Striakhilev, and A. Nathan, “Materials optimization for TFTs fabricated at low temperature on plastic substrate,” Abstract, 18th International Conference on Amorphous and Microcrystalline Semiconductors, Snowbird, Utah, USA, August 22-27, 1999.

  • A. Sazonov and A. Nathan, “A 120 °C fabrication technology for a-Si:H thin film transistors on flexible polyimide substrates,” Abstract, Ninth Canadian Semiconductors Technology Conference, Ottawa, August 10-13, 1999.

  • A. Sazonov, A. Nathan, R.V.R. Murthy, and S. Chamberlain, “Fabrication of a-Si:H TFTs at 120 °C on flexible polyimide substrates,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 5-9, 1999.

  • B. Park, R.V.R. Murthy, A. Sazonov, A. Nathan, and S. Chamberlain, “Process integration of a-Si:H Schottky diode and thin film transistor for low energy X-ray imaging application,” Abstract, Materials Research Society Spring Meeting, San Francisco, CA, USA, April 13-17, 1998.

  • B.G. Budaguan, A.Yu. Sazonov and A.A. Aivazov, “Evolution of surface morphology of a-Si:H films deposited at high rates in lf glow discharge,” Abstract, Materials Research Society Fall Meeting, Boston, MA, USA, December 1-5, 1997.

  • B.G. Budagyan, A.Yu. Sazonov and D.A. Stryahilev, “The detection of powder particles in a-Si:H films deposited in the low-frequency glow discharge,” Abstract, All-Russian Scientific and Technical Conference „Microelectronics and Informatics-97”, Moscow, Russia, November 1997 (in Russian).

  • B.G. Budagyan, A.Yu. Sazonov, A.E. Berdnikov, and A.A. Popov, “The features of the low-frequency glow discharge used for the deposition of amorphous hydrogenated silicon,” Abstract, All-Russian Scientific and Technical Conference „Microelectronics and Informatics-97”, Moscow, Russia, November 1997 (in Russian).

  • B.G. Budaguan, A.Yu. Sazonov, and A.A. Popov, “The growth mechanisms of a-Si:H films in the low-frequency (55kHz) glow discharge,” Abstract, Second International School-Conference on Physical Problems in Material Science of Semiconductors (PPMSS’97), Chernivtsi, Ukraine, September 8-12, 1997.

  • B.G. Budaguan, A.Yu. Sazonov, and D.A. Stryahilev, “The characterization of powder particles incorporated in a-Si:H films,” Second International School-Conference on Physical Problems in Material Science of Semiconductors (PPMSS’97), Chernivtsi, Ukraine, September 8-12, 1997.

  • B.G. Budaguan, A.A. Sherchenkov, D.A. Stryahilev, A.Yu. Sazonov, A.G. Radoselsky, A.V. Biriukov, A.A. Popov, and J.W. Metselaar, “A novel method of a-Si:H film deposition for solar cell application,” Second International School-Conference on Physical Problems in Material Science of Semiconductors (PPMSS’97), Chernivtsi, Ukraine, September 8-12, 1997.

  • B.G. Budaguan, A.A. Sherchenkov, D.A. Stryahilev, A.Y. Sazonov, A.G. Radoselsky, V.D. Chernomordik, A.A. Popov, and J.W. Metselaar, “Amorphous hydrogenated silicon films for solar cell application obtained with 55 kHz plasma enhanced chemical vapor deposition,” Abstract, Joint International Meeting of the Electrochemical Society and of the International Society of Electrochemistry, Paris, France, August 31 – September 5, 1997.

  • A.A. Aivazov, B.G. Budagyan, A.Yu. Sazonov, and B.Yu. Teterin, “The influence of monosilane dilution by noble gases on the EEDF in RF glow discharge,” Abstract, All-Russian Scientific and Technical Conference „Microelectronics and Informatics-95”, Moscow, Russia, November 23-25, 1995. (in Russian).

  • A.A. Aivazov, B.G. Budagyan, M.N. Meytin, and A.Yu. Sazonov, “The influence of helium on the stability of a-Si:H films for the radiation sensors,” Abstract, VIIth Scientific and Technical conference „Sensors and information transformation in the measurement and control systems” (“Sensor-95”), Gurzuf, Crimea, Ukraine, May 1-5, 1995.

  • B.G. Budaguan, A.A. Aivazov, and A.Yu. Sazonov, “Calorimetric investigation of structural processes in porous silicon,” Abstract, 16th International Conference on Amorphous Semiconductors (ICAS-16), Kobe, Japan, September, 1995.

  • A.A. Aivazov, B.G. Budaguan, and A.Yu. Sazonov, “Microstructure and thermal evolution of a-Si:H films,” Abstract, Materials Research Society Fall Meeting, Boston, MA, USA, December, 1994.

  • A.A. Aivazov, B.G. Budaguan, and A.Yu. Sazonov, “Exothermic effects and structural relaxation of a-Si:H films,” Abstract, Materials Research Society Fall Meeting, Boston, MA, USA, December, 1993.

  • B.G. Budagyan, A.Yu. Sazonov, and D.A. Stryahilev, “Conductivity and thermal stability of a-Si:H films doped with nitrogen,” Abstract, 3rd All-Union Conference „Physical Basics of the Reliability and Degradation of Semiconductor Devices“, Kishinev, Soviet Union, May, 1991 (in Russian).