Andrei Sazonov

Associate Professor

Electrical and Computer Engineering Department

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TEACHING
ECE 209
ECE 231
ECE 434
ECE 493_1
ECE 639

RESEARCH
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PUBLICATIONS
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Journal Papers
Refereed Conference Papers
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Refereed Journal Papers:
  • A.Sazonov, M.Meitine, D.Striakhilev, and A.Nathan, (2006) “Low Temperature Amorphous and Nanocrystalline Silicon Based TFTs for Flexible Electronics,” Fizika i Technika Poluprovodnikov 40: 986-994 (Semicond. 40: 986-994).

  • C.-H. Lee (Student), A. Sazonov, and A. Nathan, (2006) “High-performance n-channel 13.56 MHz plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors,” J.Vac.Sci.Technol.A, 24: 618-623 (also appeared in Virtual Journal of Nanoscale Science & Technology, 13: iss.20 (2006)).

  • C.-H. Lee (Student), A. Sazonov, and A. Nathan, (2006) “High Hole and Electron Mobilities in Nanocrystalline Silicon Thin-Film Transistors,” J.Non-Cryst.Solids, 352: 1732-1736.

  • C.-H. Lee (Student), D.J. Grant (Student), A. Sazonov, and A. Nathan, (2005) “Stability and Post-Deposition Thermal Annealing Effects in 75ºC Hydrogenated Nanocrystalline Silicon Films Grown by 13.56 MHz Plasma Enhanced Chemical Vapor Deposition,” J.Appl.Phys., 98: 034305-1 – 034305-7.

  • C.-H. Lee (Student), A. Sazonov, and A. Nathan, (2005) “High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition,” Appl.Phys.Lett., 86: 222106-1 – 222106-3 (also appeared in Virtual Journal of Nanoscale Science & Technology, 11: iss.22 (2005)).

  • A. Sazonov, D. Striakhilev, C.H.Lee (Student), A. Nathan, (2005) “Low Temperature Materials and Thin Film Transistors for Flexible Electronics,” Proceedings of the IEEE, 93: 1420-1428.

  • A. Sazonov, and C. McArthur (Student), (2004) “Sub-100ºC a-Si:H TFTs on plastic substrates with silicon nitride gate dielectrics,” J.Vac.Sci.Technol.A, 22: 2052-2055.

  • A. Nathan, A. Kumar, K. Sakariya, P. Servati, K.S. Karim, D. Striakhilev, A. Sazonov, (2004) “Amorphous silicon back-plane electronics for OLED displays,” IEEE Journal of Selected Topics in Quantum Electronics, 10: 58-69 (invited).

  • A. Nathan, P. Servati, K.S. Karim, D. Striakhilev, A. Sazonov, (2003) “Thin film transistor integration on glass and plastic substrates in amorphous silicon technology,” IEE Proc.Circ.Dev.Sys., 150: 329-338 – The IEE Institution Premium.

  • A. Sazonov, D. Stryahilev, A.Nathan, and L.D. Bogomolova, (2002) "Dielectric performance of low temperature silicon nitride films in a-Si:H TFTs," J.Non-Cryst.Solids, 299-302: 1360-1364.

  • D. Stryahilev, A. Sazonov, A. Nathan, (2002) "Amorphous Silicon Nitride Deposited at 120°C for OLED-TFT Arrays on Plastic Substrates," J.Vac.Sci.Technol.A, 20: 1087-1090.

  • L.D. Bogomolova, V.A. Jachkin, S.A. Prushinsky, D. Striakhilev, A. Sazonov, A. Nathan, (2002) "Electron-paramagnetic-resonance spectra of low temperature amorphous silicon nitride films grown by plasma-enhanced chemical vapor deposition," J.Non-Cryst.Solids, 297: 247-253.

  • A. Nathan, B. Park, Q. Ma, A. Sazonov, and J.A. Rowlands, (2002) “Amorphous Silicon Technology for Large Area Digital X-ray and Optical Imaging”, Microelectronics Reliability, 42: 735-746.

  • A. Nathan, B. Park, A. Sazonov, S. Tao, I. Chan, P. Servati, K. Karim, T. Charania, D. Striakhilev, Q. Ma, and R.V.R. Murthy, (2000) “Amorphous silicon detector and thin film transistor technology for large area imaging of x-rays,” Microelectronics Journal, 31: 883-891 (invited).

  • A. Sazonov, and A. Nathan, (2000) “120 °C fabrication technology for a-Si:H thin film transistors on flexible polyimide substrates,” J.Vac.Sci.Technol.A, 18: 780-782.

  • A. Sazonov, D. Striakhilev, and A. Nathan, (2000) “Materials optimization for TFTs fabricated at low temperature on plastic substrate,” J.Non-Cryst.Solids, 266-269: 1329-1334.

  • B.G. Budaguan, A.A. Aivazov, M.N. Meytin, A.Yu. Sazonov, and J.W. Metselaar, (1998) “Relaxation processes and metastability in amorphous hydrogenated silicon investigated with differential scanning calorimetry,” Physica B, 252: 198-206.

  • B.G. Budaguan, A.A. Sherchenkov, D.A. Stryahilev, A.Y. Sazonov, A.G. Radoselsky, V.D. Chernomordik, A.A. Popov, and J.W. Metselaar, (1998) “Amorphous hydrogenated silicon films for solar cell application obtained with 55 kHz plasma enhanced chemical vapor deposition,” J.Electrochem.Soc., 145: 2508-2512.

  • B.G. Budaguan, A.A. Popov, A.Yu. Sazonov, M.N. Bosyakov, D.I. Grunsky, D.W. Zhuk, (1998) “The application of low frequency glow discharge to high-rate deposition of a-Si:H,” J. Non-Cryst. Solids, 227-230: 39-42.

  • B.G. Budaguan, A.Yu. Sazonov, D.A. Stryahilev, (1998) “The characterization of powder particles incorporated in a-Si:H films,” J. Non-Cryst. Solids, 227-230: 100-104.

  • B.G. Budagyan, A.A. Aivazov, M.N. Meytin, A.Yu. Sazonov, A.E. Berdnikov, and A.A. Popov, (1997) “The metastability and relaxation processes in amorphous hydrogenated silicon,” Fizika i Technika Poluprovodnikov, 31: 1449-1454 (Semicond., 31: 1252-1256).

  • B.G. Budagyan, A.Yu. Sazonov, A.E. Berdnikov, and A.A. Popov, (1997) “The deposition of amorphous hydrogenated silicon in low-frequency glow discharge,” Izvestiya Vysshyh Uchebnyh Zavedeniy (Transactions of Universities), series Electronics, iss.3: 19-25. (in Russian).

  • B.G. Budagyan, A.A. Aivazov, M.N. Meytin, A.Yu. Sazonov, D.A. Stryahilev, and I.V. Filatova, (1996) “The investigation of physical properties and the ways of increased stability of a-Si1-xNx:H films characteristics for photosensitive elements,” Izvestiya Vysshyh Uchebnyh Zavedeniy (Transactions of Universities), series Electronics, iss.1-2: 29-32. (in Russian).

  • B.G. Budaguan, A.A. Aivazov, and A.Yu. Sazonov, (1996) “Calorimetric investigation of structural processes in porous silicon,” J. Non-Cryst. Solids, 204: 169-171.

  • A.A. Aivazov, B.G. Budaguan, and A.Yu. Sazonov, (1994) “The influence of the microstructure on the thermal stability of a-Si1-xNx:H films,” Physica B 193: 195-200.

  • A.A. Aivazov, B.G. Budaguan, and A.Yu. Sazonov, (1993) “Microstructure and thermal stability of a-Si1-xNx:H films,” Neorganicheskie Materialy 29: 902-905 (Inorganic Materials 29: 1078-1080).

  • Budagyan, B.G., Aivazov, A.A. and A.Yu. Sazonov, (1993) “Effect of the concentration of nitrogen on the microstructure and dark conductivity of a-Si1-xNx:H films,” Fizika i Technika Poluprovodnikov 27: 1365-1367 (Semicond. 27: 754-756).

  • A.A. Aivazov, B.G. Budaguan, A.Yu. Sazonov, and D.A. Stryahilev, (1992) “Growth process, structure and thermal stability of a-Si1-xNx:H films,” J. Non-Cryst.Solids 146: 190-196.

  • A.A. Aivazov, B.G. Budaguan, A.Yu. Sazonov, and D.A. Stryakhilev, (1992) “Growth, structure, and properties of -Si1-xNx:H films,” Neorganicheskie Materialy 28: 2103-2106 (Inorganic Materials 28: 1710-1712).

  • A.A. Aivazov, B.G. Budaguan, E.L. Prikhod’ko, and A.Yu. Sazonov, (1991) “Thermal stability of nitrogen-doped a-Si:H films,” Fizika i Technika Poluprovodnikov 25: 1802-1804 (Sov. Phys. Semicond. 25: 1083-1085).