Andrei Sazonov

Associate Professor

Electrical and Computer Engineering Department

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ECE 209
ECE 231
ECE 434
ECE 493_1
ECE 639

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Refereed Conference Papers (Full Size):
  • C.-H. Lee (Student), A. Sazonov, M.R. Esmaeili Rad (Student), G. Reza Chaji, and A. Nathan, “Ambipolar Thin-Film Transistors and Invertors Fabricated by PECVD Nanocrystalline Silicon,” in Amorphous and Polycrystalline Silicon Science and Technology— 2006, H.A. Atwater, Jr., V. Chu, S. Wagner, K. Yamamoto, H-W. Zan, eds., Mat.Res.Soc.Symp.Proc., Pittsburgh, PA, 2006, vol.910 – MRS Graduate Student Award.

  • M.R. Esmaeili Rad (Student), C.-H. Lee (Student), A. Sazonov and A. Nathan, “Nanocrystalline Silicon Films Deposited by RF PECVD for Bottom-gate Thin-film Transistors,” in Amorphous and Polycrystalline Silicon Science and Technology— 2006, H.A. Atwater, Jr., V. Chu, S. Wagner, K. Yamamoto, H-W. Zan, eds., Mat.Res.Soc.Symp.Proc., Pittsburgh, PA, 2006, vol.910: 0910-A22-13.

  • C.-H. Lee (Student), A. Sazonov, and A. Nathan, “High Mobility N-Channel and P-Channel Nanocrystalline Silicon Thin-Film Transistors,” Proceedings of 51st IEEE International Electron Devices Meeting, Washington, DC, USA, 2005, pp.937-940.

  • C.-H. Lee (Student), A. Sazonov, and A. Nathan, “High Electron Mobility (~120 cm2/Vs) PECVD Nanocrystalline Silicon Top-Gate TFTs at 260 oC,” in Amorphous and Nanocrystalline Silicon Science and Technology— 2005, R. Biswas, R. Carius, R. Collins, M. Kondo, P. Craig Taylor, eds., Mat.Res.Soc.Symp.Proc.,  Pittsburgh, PA, 2005, vol.862: A17.5.1-A17.5.6.

  • C.-H. Lee (Student), A. Sazonov, and A. Nathan, “Effects of Post Annealing and Material Stability on Undoped and n+ nc-Si:H Films Deposited at 75 °C Using 13.56 MHz PECVD,” in Amorphous and Nanocrystalline Silicon Science and Technology— 2005, R. Biswas, R. Carius, R. Collins, M. Kondo, P. Craig Taylor, eds., Mat.Res.Soc.Symp.Proc.,  Pittsburgh, PA, 2005, vol.862: A5.4.1-A5.4.6.

  • S. Koul, Y. Vygranenko, F. Li, A. Sazonov, and A. Nathan, “Fabrication of RR-P3HT-Based TFTs Using Low-Temperature PECVD Silicon Nitride Passivation,” in Organic Thin-Film Electronics, A.C. Arias, N. Tessler, L. Burgi, J.A. Emerson, eds., Mat.Res.Soc.Symp.Proc.,  Pittsburgh, PA, 2005, vol.871E: I9.4.1 – I9.4.6.

  • C.-H. Lee (Student), A. Sazonov, and A. Nathan, “Low Temperature (75°C) Hydrogenated Nanocrystalline Silicon Films Grown by Conventional Plasma Enhanced Chemical Vapor Deposition for Thin Film Transistors,” in Amorphous and Nanocrystalline Silicon Science and Technology— 2004, G. Ganguly, M. Kondo, E.A. Schiff, R. Carius, and R. Biswas, eds., Mat.Res.Soc.Symp.Proc.,  Pittsburgh, PA, 2004, vol.808: A4.17.1-A4.17.6.

  • M. Meitine, and A. Sazonov, “Top Gate TFT for Large Area Electronics,” in Flexible Electronics 2004— Materials and Device Technology, N. Fruehauf, B.R. Chalamala, B.E. Gnade, J. Jang, eds., Mat.Res.Soc.Symp.Proc., Pittsburgh, PA, 2004, vol.814: I6.12.1-I6.12.6.

  • A. Nathan, D. Striakhilev, P. Servati, K. Sakariya, A. Sazonov, S. Alexander, S. Tao, C.-H. Lee, A. Kumar, S. Sambandan, S. Jafarabadiashtiani, Y. Vygranenko, and I.W. Chan, “a-Si AMOLED Display Backplanes on Flexible Substrates,” in Flexible Electronics 2004— Materials and Device Technology, N. Fruehauf, B.R. Chalamala, B.E. Gnade, J. Jang, eds., Mat.Res.Soc.Symp.Proc., Pittsburgh, PA, 2004, vol.814: 61-72 (invited).

  • A. Sazonov, ”Materials Challenges for TFT on Plastic Substrates,” Proceedings of 16th Annual IEEE Lasers and Electro Optics Society (LEOS) Meeting, Tucson, USA, October, 2003, vol.2, pp. 533-534 (invited).

  • C. McArthur (Student), M. Meitine, and A. Sazonov, “Optimization of 75°C Amorphous Silicon Nitride for TFTs on Plastics,” in Flexible Electronic — Materials and Device Technology, N. Fruehauf, B.R. Chalamala, B.E. Gnade, J. Jang, eds., Mat.Res.Soc.Symp.Proc., Pittsburgh, PA, 2003, vol.769: 303-308.

  • M. Meitine, and A. Sazonov, “Low Temperature PECVD Silicon Oxide for Devices and Circuits on Flexible Substrates,” in Flexible Electronic — Materials and Device Technology, N. Fruehauf, B.R. Chalamala, B.E. Gnade, J. Jang, eds., Mat.Res.Soc.Symp.Proc., Pittsburgh, PA, 2003, vol.769: 165-170.

  • A. Nathan, D. Striakhilev, P. Servati, K. Sakariya, A. Kumar, K.S. Karim, A. Sazonov, “Low Temperature a-Si:H Pixel Circuits for Mechanically Flexible AMOLED Displays,” in Flexible Electronic — Materials and Device Technology, N. Fruehauf, B.R. Chalamala, B.E. Gnade, J. Jang, eds., Mat.Res.Soc.Symp.Proc., Pittsburgh, PA, 2003, vol.769: 29-34 (invited).

  • A. Nathan, K. Sakariya, A. Kumar, P. Servati, K.S. Karim, D. Striakhilev, A. Sazonov, “Amorphous silicon TFT circuit integration for OLED displays on glass and plastic,” Proceedings of IEEE CICC (Custom Integrated Circuits Conference), San Jose, CA, USA, 2003, pp.215-222.

  • T. D. Stryahilev, A. Sazonov, and A. Nathan “PECVD Amorphous Silicon Nitride at 120°C for a-Si:H TFTs,” in Advanced Materials and Devices for Large-Area Electronics, J.S. Im, J.H. Werner, S. Uchikoga, T. Felter, T.Voutsas, H.J. Kim, eds., Mat.Res.Soc.Symp.Proc.,  Pittsburgh, PA, 2001, vol.695E: D5.15.1-D5.15.6.

  • T. Charania, A. Sazonov, and A. Nathan, “Use of 120 °C n+-mc-Si:H in Low Temperature TFT Fabrication,” Thin Film Transistor Technologies V, J.Kuo, ed., Proc. Of 198th Meeting of the Electrochemical Society, Phoenix, Arizona, USA, 2000, v.2000-31, pp. 54-62.

  • I. Chan, B. Park, A. Sazonov, and A. Nathan, “Process Considerations for Small Area a-Si:H Vertical Thin Film Transistors,” Thin Film Transistor Technologies V, J.Kuo, ed., Proc. Of 198th Meeting of the Electrochemical Society, Phoenix, Arizona, USA, 2000, v.2000-31, pp.63-69.

  • P. Servati, A. Nathan, and A. Sazonov, “Mechanisms Underlying the OFF Characteristics of a-Si:H Thin Film Transistors,” Thin Film Transistor Technologies V, J.Kuo, ed., Proc. Of 198th Meeting of the Electrochemical Society, Phoenix, Arizona, USA, 2000, v.2000-31, pp.198-204.

  • A. Sazonov, D. Stryahilev, and A. Nathan “Low Temperature a-Si:H TFT on Plastic Films: Materials and Fabrication Aspects,” Proceedings of 23rd International Conference on Microelectronics, Nis, Yugoslavia, May 12-15, 2000, vol.2, pp. 525-528.

  • A. Nathan, A. Sazonov, R.V.R. Murthy, Z.H. Gu, Q. Ma, B. Park, S. Tao, I. Chan, P. Servati, K.S. Karim, “Amorphous Silicon Image Sensor Technology,” Proc. SPIE – Int. Soc. Opt. Eng., 2000, vol.3975: 691-698.

  • A. Nathan, R.V.R. Murthy, B. Park, A. Sazonov, and S.G. Chamberlain, (2000) “Roughness of TFT gate metallization and its impact on leakage, threshold voltage shift and mobility,” in Amorphous and Heterogeneous Silicon Thin Films 2000, R.W. Collins, H.M. Branz, S. Guha, H. Okamoto, M. Stutzmann, eds., Mat.Res.Soc.Symp.Proc.,  Pittsburgh, PA, 2000, vol.609: A28.6.1-A28.6.7.

  • P. Servati, A. Nathan, and A. Sazonov, “A physically-based SPICE model for the leakage current in a-Si:H TFTs accounting for its dependencies on process, geometrical, and bias conditions,” in Amorphous and Heterogeneous Silicon Thin Films 2000, R.W. Collins, H.M. Branz, S. Guha, H. Okamoto, M. Stutzmann, eds., Mat.Res.Soc.Symp.Proc.,  Pittsburgh, PA, 2000, vol.609: A28.3.1-A28.3.6.

  • A. Sazonov, A. Nathan, R.V.R. Murthy, and S. Chamberlain, “Fabrication of a-Si:H TFTs at 120 °C on flexible polyimide substrates,” in Flat Panel Displays and Sensors – Principles, Materials and Processes, F.R. Libsch, B. Chalamala, R. Friend, T. Jackson, and H. Ohshima, eds., Mat.Res.Soc.Symp.Proc.,  Pittsburgh, PA, 2000, vol.558: 375-380.

  • A. Nathan, B. Park, A. Sazonov, S. Tao, Z.H. Gu, I. Chan, P. Servati, K.S. Karim, T. Charania, D. Striakhilev, Q. Ma, R.V.R. Murthy, ”Thin Film Imaging Technology on Glass and Plastic,” Proceedings of 12th International Conference on Microelectronics, October 31 – November 2, 2000, Tehran, Iran, pp. 11-14 (invited).

  • P. Servati, A. Nathan, A. Sazonov, “Effect of Front Hole Channel on Leakage Characteristicsof a-Si:H TFT,” Proceedings of 12th International Conference on Microelectronics, October 31 – November 2, 2000, Tehran, Iran, pp. 247-250.

  • A. Nathan, R.V.R. Murthy, Q. Ma, B. Park, H. Pham, A. Sazonov, “Amorphous Silicon Detector and Thin Film Transistor Technology for Large Area Imaging of X-Rays,” Proceedings of 22nd International Conference on Microelectronics, Nis, Yugoslavia, May 14-17, 2000, vol.1, pp. 77-84 (invited).

  • B.G. Budaguan, M.N. Meytin, A.G. Radoselsky, A.Yu. Sazonov, and D.A. Stryahilev, “Stability of a-Si:H films deposited in square-wave modulated 55 kHz glow discharge,” Proceedings of Second World Conference on Photovoltaic Energy Conversion, Vienna, Austria, July 6-10, 1998, vol.1, pp. 1008-1011.

  • B. Park, R.V.R. Murthy, A. Sazonov, A. Nathan, and S. Chamberlain, “Process integration of a-Si:H Schottky diode and thin film transistor for low energy X-ray imaging application,” in Amorphous and Microcrystalline Silicon Technology – 1998, H. Branz, M. Hack, S. Wagner, R.E.I. Schropp, and I. Shimizu, eds., Mat.Res.Soc. Symp.Proc., Pittsburgh, PA, 1998, vol.507: 237-242.

  • B.G. Budagyan, A.Yu. Sazonov, A.E. Berdnikov, A.A. Popov and A.A. Aivazov, “The application of low-frequency glow discharge for high-rate a-Si:H deposition,” Proceedings of 26th IEEE Photovoltaic Specialists Conference (26th IEEE PVSC), Anaheim, CA, USA, September 29 – October 03, 1997, pp.643-646.

  • M.N. Bosyakov, D.I. Grunsky, A.P. Dostanko, D.W. Zhuk, B.G. Budagyan, A.Yu. Sazonov, and A.A. Popov, “Spectral investigation of a-Si:H films deposition in LF discharge plasma,” Proceedings of 2nd International Conference “Plasma Physics and Plasma Technologies”, September 15-19, 1997, Minsk, Belarus, pp.495-498 (in Russian).

  • B.G. Budaguan, A.A. Aivazov, A.Yu. Sazonov, A.A. Popov, and A.E. Berdnikov, “High-rate deposition of a-Si:H films in 55 kHz glow discharge: growth mechanisms and film structure,” in Amorphous and Microcrystalline Silicon Technology – 1997, E.A. Schiff, M. Hack, S. Wagner, R.E.I. Schropp, and I. Shimizu, eds., Mat.Res.Soc.Symp.Proc., Pittsburgh, PA, 1997, vol.467: 585-590.

  • B.G. Budaguan, A.A. Aivazov, and A.Yu. Sazonov, “Calorimetric investigation of structural processes in disordered semiconductors,” in Amorphous Silicon Technology – 1996, M. Hack, E.A. Schiff, S. Wagner, R.E.I. Schropp, and A. Matsuda, eds., Mat.Res.Soc.Symp.Proc., Pittsburgh, PA, 1996, vol.420: 635-640.