Ion Implantation Research ( C.R. Selvakumar)
[Under construction]
Specific topics:
- Dopant implantation studies( B, P, As)
- Ge ion implantation for realizing device-quality SiGe regions.
- Process modeling using SUPREM
- Shallow junction formation and study of transient and anomalous diffusion
- Pre-amorphization effects and defect analysis
Contact:
C. R. (Selva) Selvakumar
E&CE Department
University of Waterloo
Waterloo, Ontario
Canada N2L 3G1
email: selvakumar@uwaterloo.ca
voice: (519) 888-4567 ext.3978
fax: (519) 746-3077
last modified: June 11, 1995