Bipolar and Field Effect Devices Modeling and Process Technologies
SiGe Devices and Integrable Technologies
Photodetectors (UV, Vis, IR ), Solar Cells
Study of High-K Dielectric Gates
Dr. Selvakumar's current research interests are centred in modeling and
fabrication of semiconductor devices. Current ongoing research is on Solar Cells.
Past interests have been on developing a good understanding of thin gate oxides and high-K dielectric
gate issues for nanoelectronic devices. In the past he was also interested in accurate D.C.
and A.C. Device Models for Bipolar and Field Effect Devices over a wide
range of temperatures including harsh environments such as high radiation.
He has interests in experimental studies on Integrable Process Technologies
(for example: low temperature epitaxy and ion-implantation). Research in
Silicon-Germanium Devices and Technologies for a variety of applications
D. Shiri, A. Verma, C.R.Selvakumar, M.P. Anantram, "Reversible Modulation of
Spontaneous Emission by Strain in Silicon Nanowires" SCIENTIFIC REPORTS
(Nature Publishing Group), Volume: 2, Article Number: 461 Published:
June 15, 2012
K.H. Kwok and C.R. Selvakumar, "Profile Design Considerations for Minimizing Base Transit Time in SiGe HBTs of ALL Levels of Injection Before Onset of Kirk Effect" IEEE Transactions on Electron Devices, Vol. 48, Number 8, August 2001, pp. 1540-1549.
S.Mohajerzadeh and C.R.Selvakumar, "Fabrication of N+ _N
Iso -type diodes with LPCVD-grown Polysilicon on Silicon Structures"
IEEE Trans. Electron Devices. Vol.44.,No.11, pp. 2041-2043, Nov. 1997
S. Mohajerzadeh, and C.R. Selvakumar, "A Simple Model for Low Energy
Ion-solid Interactions" J.Appl. Phys. Vol.81.,No. 7, pp 3003 -6,
April 1, 1997.
S. Mohammadi and C.R. Selvakumar, "Calculation of Depletion Layer
Thickness by including the Mobile Carriers" IEEE Trans. Electron Devices,
Vol. 43, pp. 185 -8, 1996.
S. Mohajerzadeh, C.R. Selvakumar, D.E. Brodie, M.D.Robertson and J.M.
Corbett, "An Ion Beam Vapour Deposition Technique for Epitaxial Growth of
Si and SiGe Films" J. Vac. Science and Technology, vol. A14(3),
pp. 1963 -66, 1996.
S. Mohajerzadeh, C.R. Selvakumar, D.E. Brodie, M.D.Robertson and J.M.
Corbett, "A Low Energy Ion Beam Assisted Deposition Technique for
Realizing Iso-Type SiGe/Si Heterointerface Diodes", Thin Solid Films,
Vol. 283, pp182-187, 1996.
S. Mohajerzadeh and C.R. Selvakumar, "A Novel N+ -Polysilicon on
N-Silicon iso-type Diode" Can. J. Phys. (Suppl.) Vol.74, pp.S186-S188, 1996
S. Mohajerzadeh, C. R. Selvakumar, D.E. Brodie, M. Robertson and J.
Corbett, " A Low Temperature Ion Vapour Deposition Technique for Silicon
and Silicon Germanium Epitaxy", Can. J. Phys.(Suppl.), Vol. 74,
pp. S69-S73, 1996
S.Mohajerzadeh, C.R.Selvakumar and D.E. Brodie, M.D. Robertson and J.M.
Corbett, (1995) "Ion beam vapor deposition for Si epitaxy at low substrate
temperatures", J. Appl. Phys. vol. 78, No.3., pp. 2057-9, Aug. 1, 1995.
S. Mohajerzadeh, C.R. Selvakumar, J.P. Noel and D.C. Houghton(1995), "A
Field Assisted Emission Model of Interface States in Heterostructure
Devices" J.Appl. Phys. Vol. 78, No. 12, pp. 7382 - 86, Dec. 15, 1995.
S. Mohajerzadeh, C.R. Selvakumar, D.E. Brodie, M.D. Robertson and J.M.
Corbett, "Study of in-situ Surface Cleaning for Si and SiGe Epitaxy on Si
with a Novel Ion Beam Vapor/Assisted Deposition Technique", Progress in
Surface Science, Vol.50, pp.347 -356, 1995
S. Mohajerzadeh, C.R. Selvakumar, J.P. Noel and D.C. Houghton,(1995)
"Early Voltage Degradation in Heterostructure Bipolar Transistors due to
Interface States", Solid -State Electronics., vol.38, No. 1, pp. 131-133,
Jan 1995.
S.Mohajerzadeh, C.R.Selvakumar and D.E. Brodie (1994), " A Low
Temperature Ion-Beam-Assisted Deposition Method for Realizing
Si{1-x}Gex/Si Heterostructures", Solid -State Electronics., vol.
37, No.8, pp.1467-9, Aug 1994.
S. Mohajerzadeh, A. Nathan and C.R. Selvakumar(1994), " Numerical
Simulation of a p-n-p-n Color Sensor for Simultaneous Color Detection"
Sensors and Actuators vol. A44, pp. 119-124, 1994.
S. Mohammadi and C.R. Selvakumar(1994), " Analysis of BJT's, Pseudo-
HBT's and HBT's by Including the Effect of Neutral Base Recombination."
IEEE Trans. Electron Devices , vol. 41, No.10, pp.1708-1715, Oct 1994.
O.W. Purbo, C.R.Selvakumar, and D. Misra(1993), " Reactive Ion Etching
of SOI (SIMOX and ZMR) Silicon in Nitrogen containing CF4 + O2 Pla
smas", Journal of Electrochemical Society , Vo. 140, No. 9, pp.2659-2668, Sept
1993.
J.S.Hamel, D.J.Roulston, and C.R.Selvakumar(1992), "The perforated
emitter contact" IEEE Electron Device Letters, vol. 13, No. 2, pp.114-116,
Feb. 1992.
J.S.Hamel, D.J.Roulston and C.R.Selvakumar (1992), "Trade-off Between
Emitter Resistance and Current Gain in Polysilicon Emitter Bipolar
Transistors with Intentionally Grown Interfacial Oxide layers", IEEE
Transistors with Intentionally Grown Interfacial Oxide layers", IEEE
Electron Device Letters, vol. 13, No.6., pp.332-334, June 1992.
J.S.Hamel, D.J.Roulston, C.R.Selvakumar(1992) and G.R.Booker,"
Two-dimensional Analysis of Emitter Resistance in the presence of
interfacial oxide break-up in polysilicon emitter bipolar transistors" IEEE
Trans. Electron Devices, vol.39, No. 9, pp.2139-2146, September 1992.
J.S.Hamel, D.J.Roulston and C.R.Selvakumar (1992), " Experimental
Method for Extraction of Emitter Injection Limited Gain in Bipolar
Transistors" Solid -State Electronics , vol.35, No.7, pp1021-1022, July 1992
C.R.Selvakumar and B.Hecht, (1991) "SiGe-Channel n-MOSFET by
Germanium Implantation", IEEE Electron Device Letters, vol. 12, No.8,
pp.444-446, Aug.1991
O.W.Purbo and C.R.Selvakumar, (1991) "High-Gain SOI Polysilicon
Emitter Transistors", IEEE Electron Device Letters, vol.12, No.
11, Nov. 1991.
J.S.Hamel and C.R.Selvakumar,(1991) "The General Transient Charge
Control Relation: A New Charge Control Relation for Semiconductor Devices"
IEEE Trans. Electron Devices, vol. 38, No.6, pp.437-443, June 1991
O.Purbo and C.R.Selvakumar,(1991) "Simultaneous Extraction of Hole
Barrier Height and Interfacial Oxide thickness of Polysilicon Emitter
Bipolar Transistors.", Solid -State Electronics, vol. 34, No.8, pp.
821-826, Aug 1991
S.C.Jain, A.Nathan, D.R.Briglio, D.J.Roulston,C.R.Selvakumar, and
T.Yang,(1991) "Band to Band Free Carrier Absorption Coefficients in Silicon
at 4 K and at Room Temperature" J. Appl. Phys., vol.69, No.6, pp.3687-90,
1991
D.Misra, C.R.Selvakumar, E.L.Heasell, and D.J.Roulston,(1988) "Effect
of Reactive Ion Etching on the Electrical Characteristics
of Poly-Emitter Bipolar Transistors.", Solid -State Electronics, Vol.31,
No.11, pp. 1647-1649, Nov.1988.
C.R.Selvakumar, D.J.Roulston, S.C.Jain,and J.Tsao,(1988) "Effective
Recombination Velocity of Low-High Junctions", Solid -State Electronics
Vol.31, No.8, pp.1346-1348, Aug 1988.
C.R.Selvakumar,(1987) "A New Minority Carrier Lifetime Model for
Heavily Doped GaAs and InGaAsP to Obtain Analytical Solutions.",
Solid -State Electronics, Vol.30, No.7, pp. 773-774, July 1987.
C.R.Selvakumar and D.J.Roulston ,(1987) "A New Simple Analytical
Emitter Model for Bipolar Transistors.", Solid -State Electronic
s, Vol.30, No.7, pp. 723-728, July 1987.
P.Ashburn, D.J.Roulston and C.R.Selvakumar,(1987) "Comparison of
Experimental and Computed Results on Arsenic- and Phosphorus-Doped
Polysilicon Emitter Bipolar Transistors.", IEEE Trans. Electron Devices,
Vol.ED-34, No.6, pp. 1346-1353, June 1987.
M.Jagadesh Kumar, C.R.Selvakumar, V.Ramamurthy, and K.N.Bhat,(1985)
"On the Dominant Recombination Level of Platinum in Silicon.", Physica
Status Solidi (a), Vol.87, pp. 651-655, 1985.
C.R.Selvakumar,(1984) "A Simple General Analytical Solution to
Minority Carrier Transport in Heavily Doped Semiconductor
s.", J. Appl. Phys. Vol.56, pp. 3476-3478, Dec. 15, 1984.
C.R.Selvakumar (1982), "Approximations to Fermi-Dirac Integrals and
Their Use in Device Analysis.", Proceedings of the IEEE, Vol.70, p
p. 516-518, May 1982.
C.R.Selvakumar (1982), "Approximations to Two-Step Diffusion Process
by Prony's Method.", Proceedings of the IEEE, Vol.70, pp. 514-516,
May 1982.
C.R.Selvakumar (1982), "Approximations to Complementary Error Function
by Method of Least Squares.", Proceedings of the IEEE, Vol.70, pp. 410-413,
April 1982.
C.R.Selvakumar (1981), "Negative Feedback High Efficiency A.C.Voltage
Regulator.", IEEE Transactions on Industrial Electronics Control and
Instrumentation, Vol.IECI-28, No.1, pp. 24-27, Feb.1981.
C.R.Selvakumar (1978), "A Voltage Regulator without a Zener Diode.",
Electronics Engineering (U.K), p.35, Sept.1978.
C.R.Selvakumar (1978), "A Versatile Quick-Check Linear IC Tester.",
Electronics Engineering (U.K), p.32, May 1978.
Invited In-Depth Review Article in IEEE Press Book:
C.R.Selvakumar,(1989) "Theoretical and Experimental Aspects of
Polysilicon Emitter Bipolar Transistors.", in Polysilicon Emitter Bipolar
Transistor, Eds. A. Kapoor and D.J. Roulston, IEEE Press Book
1989.
Patents:
C.R.Selvakumar, S.Mohajerzadeh and D.E.Brodie, "Low Temperature
ion-beam assisted deposition methods for realizing SiGe/Si heterostructure." US Patent No. 5633194 issued May 27, 1997
C.R.Selvakumar and S.G. Chamberlain, "Method for making
silicon-germanium devices using germanium implantation."
US Patent No. 5426069 issued June 20, 1995
C.R.Selvakumar, S. Mohajerzadeh and D.E. Brodie, “Low tempearature ion-beam
assisted deposition method for realizing SiGe/Si heterostrcutures”
Canadian Patent CA 2147198
Non-refereed Journal Articles:
H.Iwai, C.R.Selvakumar and K. Shenai, Guest editorial and Foreward, IEEE Transaction on Electron Devices, March 1995
Refereed Conference Publications:
A. Anvar, C.R. Selvakumar, S. Karmalkar, "Novel Solution to Minority Continuity Equation in PN Junction
Solar Cells Under Arbitrary Optical Generation", International Workshop pf Physics of Semiconductor
Devices, Bangalore, India, December 2015 (Best paper award)
L. Rezaee, and C.R.Selvakumar “Percolation modeling of the effects of thickness, area
and applied stress on soft and hard gate oxide breakdown.” IEEE Sponsored 2009
International Workshop on Physics of Semicodnuctor Devices, held in New Delhi,
India, December 2009
L. Rezaee, and C.R.Selvakumar “Simulation of soft and hard breakdown of ultra-thin
gate oxides”, IEEE Conference: Canadian Conference on Electrical and Computer
Engineering, Niagara Falls, Ontario, Canada, May 4-7, 2008, Proceedings vol.1-4,
pp. 1579-1582
L. Woodward, P.Woo, M.Capanu, I.Koutsaroff, C.R.Selvakumar and A.Cervin-Lawry,“Novel High-Q Suspended Inductors on Alumina Ceramic Substrates”, Mater. Res. Soc. Proc., San Francisco, CA , Vol. 833 Paper G6.4.1, 2004.
Samuel T. Gunaseelan, C.R. Selvakumar, and D. Hiemstra, “Radiation Effects and Annealing Behaviour of Operational Amplifiers” (CCECE 2003), IEEE Canadian Conference on Electrical and Computer Engineering, Montreal, Canada, May 4-7, 2003.
Samuel T. Gunaseelan, C.R. Selvakumar, and D. Hiemstra, “Low Temperature Performance of Operational Amplifiers” (CCECE 2003), IEEE Canadian Conference on Electrical and Computer Engineering, Montreal, Canada, May 4-7, 2003.
C.R.Selvakumar (Invited) “Non-Quasi-Static Modeling of Heterojunction Bipolar Transistors” International Workshop on Physics of Semiconductor Devices (IWPSD-2003), Chennai, India, December 16-20, 2003.
L.F. Marsal and C.R. Selvakumar, "Analysis of Si/Si1-xGex solar cell
structures." Electron Devices Conference CDE'99, Madrid, Spain, June 10-11,
1999, Proceedings of CDE'99, pages 417-420, ISBN 84-00-07819-5
K.H.Kwok and C.R.Selvakumar, "Boron Diffusion in High Dose
Germanium-Implanted-Silicon", Proceedings of the Canadian Conference on
Electrical and Computer Engineering, Waterloo, Ontario, Canada. May 25-28, 1998
S. Mohajerzadeh, C.R. Selvakumar, D.E. Brodie, M.D. Robertson and J.M.
Corbett," Ion Beam Vapor Deposition Technique for Epitaxial Growth of Si and
SiGe Films" 42nd National Symposium, American Vacuum Society, Minneapolis
October 16-20, 1995
S. Mohajerzadeh, C.R. Selvakumar, D.E. Brodie, M.D. Robertson and
J.M.Corbett, " A New Ion beam Deposition Technique for low temperature
Silicon Epitaxy" Materials Research Society Symposium, San Francisco,
April 1995
S. Mohajerzadeh, C.R. Selvakumar, D.E. Brodie, M.D. Robertson and J.M.
Corbett, "Study of In-Situ Surface Cleaning for Si and SiGe Epitaxy on Si
with a Novel Ion Beam Vapour /Assisted Deposition Technique" Surface
Canada '95, Waterloo, Ontario, Canada, 1995
S. Mohajerzadeh and C.R. Selvakumar, "A Novel N+ -Polysilicon on[58] S. Mohajerzadeh and C.R. Selvakumar, "A Novel N+ -Polysilicon on
N-Silicon iso-type Diode" 7th Canadian Conference on Semiconductor
Technology, Ottawa, Ontario, Canada, August 1995
S. Mohajerzadeh, C. R. Selvakumar, D.E. Brodie, M. Robertson and J.
Corbett, "A Low Temperature Ion Vapour Deposition Technique for Silicon
and Silicon Germanium Epitaxy",7th Canadian Conference on Semiconductor
Technology, Ottawa, Ontario, Canada, August 1995
D. Misra, O.W.Purbo, and C.R. Selvakumar " Process Modification to
Reduce Damage in Reactive Ion Etched Surfaces.", Paper 2091-30,
Microelectronics Processing 1993, and SPIE Conference, September
27-29, 1993, Monterey,CA, USA.
O.W. Purbo and C.R. Selvakumar "Gamma Radiation Effects on ZMR-SOI
Polysilicon Emitter Transistors" 1993 International Conference on
Microelectronics , Dhahran, Saudi Arabia, December 14-16, 1993
S.Mohajerzadeh, C.R.Selvakumar and D.E. Brodie, " An Ion-Beam-Assisted
Technique for Si{1-x}Gex/Si heterostructure Growth," Sixth Canadian
Semiconductor Technology Conference, Ottawa, August 11-13, 1992.
O.W.Purbo, C.R.Selvakumar and D.Misra, (1991)," Reactive Ion Etching
of SOI (SIMOX) and ZMR) Silicon in CF4 + O2 and SF6 + O2 Plasmas" F
ifth International Symposium on Silicon-on-Insulator Technology and Devices,
St.Louis, Missouri, 181st Electrochemical Society Meeting ( May 1992).
C.R.Selvakumar and O.W.Purbo (1991), "High Gain Vertical Polysilicon
Emitter Bipolar Transistor Realized on Zone-Melting Recrystallized
Silicon-On-Insulator Material" SPIE Conference on Emerging Optoelectronic
Technologies, Dec 16-21, 1991, Bangalore, India. (paper 1622-130)
C.R.Selvakumar and B.Hecht (1991), "Area Effect of Silicon-Germanium
Channel Enhancement Type n-MOSFET's Realized by Germanium
Implantation" SPIE Conference on Emerging Optoelectronic Technologies,
Dec 16-21, 1991, Bangalore, India. (paper 1622-60)
J.S.Hamel, D.J.Roulston, P.Ashburn, D.Gold, C.R. Selvakumar,(1990)
"2-D Computer Simulation of Emitter Resistance of Interfacial Oxide
Break-up in Polysilicon Emitter Bipolar Transistors", 20th European
Solid State Device Research Conference ESSDERC-90, Nottingham, Eng
land, September 10-13,1990, pp.333-336 (Imprint: Adam Hilger, Bristol,September 10-13,1990, pp.333-336 (Imprint: Adam Hilger, Bristol, Philadelphia and New York ISBN 0-7503-0065-5)
C.R.Selvakumar and D.J. Roulston,(1987) "A New Simple Analytical
Evaluation of Minority Carrier Current in Arbitrarily Doped Region with non-
thermal Generation of Carriers.", European Solid State Device Research
Conference ESSDERC-87, Bologna, Italy, pp.965-967, Sept. 1987.
M.Jagadesh Kumar, C.R.Selvakumar, V.Ramamurthy, and K.N.Bhat,
(1985)"The effect of cooling rate on the properties of platinum diffused
diodes.", International Conf. on Physics of Compensated Semiconductors,
I.I.T Madras, India, Feb 1985.
Non-Refereed Conference/Workshop Papers
K.H. Kwok and C.R.Selvakumar, " Higher Ge incorporation in a SiGe base
made possible by multiple high-dose germanium implantation", Materials
Technology'98, Waterloo, Ontario, Canada, June 13, 1998.
K.H.Kwok and C.R.Selvakumar, "Heterostructure Bipolar Transistors
fabricated by High Dose Germanium Implantation and Solid Phase Epitaxy.",
Proceedings of the Micronet Annual Workshop, pp.15-16, Ottawa, Ontario,
Canada, March 2-3, 1997
A.Nathan, C.R.Selvakumar, Y. Bhatnagar, " Mobility and Charge Behaviour
in Si/SiGe Heterostructure FETs", Micronet Annual Workshop, Ottawa, Ontario,
Canada, Feb 26-27, 1995.
C.R.Selvakumar, "Recent Results of SiGe Devices Made at Waterloo."
Proceedings of the Micronet SiGe Transistor Workshop, Ottawa, On
tario, Canada, Feb, 1994
D.J.Roulston, A.Nathan, and C.R.Selvakumar, "Technology Theory and
Computer aided design of polysilicon emitter and heterojunction bipolar
devices.", Proceedings of the Micronet Annual Workshop, Ottawa, Canada,
April 30, 1993.
O.W.Purbo and C.R.Selvakumar (1992), "A Study of Polysilicon Emitter
Bipolar Transistors Fabricated on ZMR-SOI Material" International Conference
on Microelectronics, January 1992, Bandung, Indonesia.
D.Misra, O.W.Purbo and C.R.Selvakumar (1991), "Reactive Ion etching of
SOI (ZMR and SIMOX) Silicon in Nitrogen containing CF4 + O2 and SF6+O2
Plasmas" ATC/SEM Symposium, Rutgers University, November 25,
1991. p.22
O.W.Purbo and C.R.Selvakumar (1992), "SOI Microelectronics for
Aerospace Applications" South East Asia Regional Computer Conferen
ce 1992, Kuala Lumpur
C.R.Selvakumar and J. Shier, Introduction to 1994 BCTM, Processins of 19
94 IEEE Bipolar and BiCMOS Circuits and Technology Meeting, Minneapolis,
Minnesota, USA
Non-Refereed Invited Papers in Conferences:
C.R.Selvakumar (1997) "Two promising SiGe technolgies" 9th International
Workshop on Physics of Semiconductor Devices, New Delhi,
Dec 16-20, 1997.
C.R.Selvakumar, "Two SiGe Technologies", 2nd SiGe Workshop, Industry
Canada, Ottawa, Canada, March 4, 1997
C.R.Selvakumar and J.S.Hamel (student),(1989) "True Non-Quasi-Static
Analyses for Bipolar Transistors.", 5th International Workshop on Physics of
Semiconductor Devices, New Delhi, December 11-16, 1989 pp.202-211;
Published by Macmillan India Ltd. (SBN 0333 92911 X), Eds. W.S. Khokle
and S.C.Jain.
C.R.Selvakumar,(1987) "Recent Analytical Efforts to Model Minority
Carrier Transport in Moderately to Heavily Doped Semiconductor R
egions.", 4th International Workshop on Physics of Semiconductor Devic
es, Madras, December 10-15,1987, pp.269-278.
Professional Activities and services:
Organizing Committee Member, Materials Technology '99 Conference held
at the University of Waterloo, November 1999
Co-Chair, Program Committee, Materials Technology '98 Conference, held
in University of Waterloo, June 13, 1998
Guest Editor, Special Issue of IEEE Transaction on Electron Devices on
Bipolar BiCMOS/CMOS Devices and Technology (Vol. 42 No.3, March
1995)
Editor, Proceedings of the 1994 IEEE Bipolar and BiCMOS Circuits and
Technology Meeting
Chair, Technical Program Committee, 1994 IEEE Bipolar/BiCMOS Circuits
and Technology Meeting, ( Minneapolis, Minnesota, Oct 10-11, 1994)
Vice-Chair, Technical Program Committee, 1993 IEEE Bipolar/BiCMOS
Circuits and Technology Meeting, ( Minneapolis, Minnesota, Oct 4-5, 1993)
Chair, Process/Technology Sub-Committee, 1992 IEEE Bipolar/BiCMOS
Circuits and Technology Meeting, ( Minneapolis, Minnesota, Oct 5-6, 1992)
Session Chairs in several IEEE, SPIE and Canadian Conferences.
Reviewer/Referee for IEEE Trans. Electron Devices , Solid State
Electronics and IEEE Electron Device Lett.
Reviewer/Referee for papers submitted to several of the Canadian
Conference on VLSI (CCVLSI) symposia and IEEE Bipolar/BiCMOS Circuits
and Technology Meetings
Reviewer for NSERC Strategic Grant and Research Partnership proposals.
Chair, IEEE Kitchner-Waterloo Electron Devices, Circuits and Systems
Chapters (1991 - 1994)
Consultant for Gennum ( Burlington, Ont) (1985-1987) and Digital Equipme
nt (Ottawa) on IC technology and bipolar device related issues ( 1990).
Consultant to CME Telemetrix, Canada on Long-wavelength Detector
s (2000). Consultant to MacDonald-Dettwiler Robotics - Aerospace and Avion
ics group- on aspects of radiation and cold temperatures on electronic devi
ces.
Member of IEEE since 1979, member of American Institute of Physics
(AIP)(1992), and member of Materials Research Society (MRS) since 1992.
Citation:
Cited in the 1992 American Men and Women of Science, R.R.Bowker
Publication.
Recently Supervised Theses:
Daryoush Shirim (Ph.D), “Electronic and Optical Properties of Silicon Nanowires: Theory and Modeling” (Co-supervision with M. P.
Anantram) 2012
Ryan Christopher Norris (Ph.D), “Silicon-Integrated Two-Dimensional
Phononic Band Gap Quasi-Crystal Architecture” (Co-supervision
With Patricia Nieva and late J.S. Hamel), 2011
L. Rezaee (Ph.D), "Bimodal Gate Oxide Breakdown in Sub-100 nm CMOS Technology" (2008)
K. H. Kwok (Ph.D), " Optimization, Analysis, and Fabrication of SiGe Heterojunction Bipolar Transistors”" (2001)
A.Akhavan Fomani (M.A.Sc), "Threshold Voltage Instability and Relaxation in hydrogenated a-Si Thin Film Transistors",(co-supervised by Dr. A.Nathan).(2005)
Lisa Taubensee (M.A.Sc), "Design and fabrication of suspended inductors on Alumina", 2004
Samuel T. Gunaseelan (M.A.Sc), "Study and modelling of power MOSFETs under radiation and low temperature environments for space applications", 2003
Xuelin Xu, "Simulation of SiGe Channel MOSFETs on SOI Structure", M.A.Sc. (2002).